Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep- Submicron MOSFETs
نویسندگان
چکیده
This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, charge-based AC model fully consistent with DC without the need for C V data, and inclusion of polydepletion effect for both DC and AC models.
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تاریخ انتشار 2004